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SHINDENGEN Schottky Rectifiers (SBD) Dual SF20JC10 100V 20A OUTLINE DIMENSIONS Case : FTO-220 Unit : mm RATINGS Absolute Maximum Ratings i If not specified, Tc=25j Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=114 IO Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 Dielectric Strength Vdis Terminals to case, AC 1 minute Mounting Torque TOR (Recommended torque F 0.3Nm) Electrical Characteristics i If not specified, Tc=25j Item Symbol Conditions Forward Voltage IF=10A, Pulse measurement, Rating of per diode VF Reverse Current VR=VRM, Pulse measurement, Rating of per diode IR Junction Capacitance f=1MHz, VR=10V, Rating of per diode Cj Thermal Resistance AEjc junction to case Ratings -55150 150 100 20 200 2.0 0.5 Unit V A A kV Nm Ratings Unit Max 0.86 V Max 0.7 mA Typ 260 pF Max 2.0 /W Copyright & Copy;2001 Shindengen Electric Mfg.Co.Ltd SF20JC10 100 Forward Voltage Pulse measurement per diode 50 20 [A] 10 Forward Current IF 5 Tc=150C [MAX] Tc=150C [TYP] Tc= 25C [MAX] Tc= 25C [TYP] 2 1 0.5 0.2 0.1 0 0.5 1 1.5 2 2.5 3 VF [V] Forward Voltage SF20JC10 100 Reverse Voltage Pulse measurement per diode Tc=150C [TYP] 10 Tc=125C [TYP] [mA] Tc=100C [TYP] 1 Tc=75C [TYP] Reverse Current IR 0.1 Tc=50C [TYP] 0.01 Tc=25C [TYP] 0.001 0.0001 0 20 40 60 80 100 Reverse Voltage VR [V] SF20JC10 25 Forward Power Dissipation DC D=0.8 20 Forward Power Dissipation 0.5 SIN 0.3 15 0.1 0.05 10 0.2 PF [W] 5 0 0 5 10 15 20 25 30 35 Io [A] Average Rectified Forward Current Tj =150C 0 tp D=tp/T T IO SF20JC10 Reverse Power Dissipation 14 DC D=0.05 0.1 0.2 0.3 12 PR [W] Reverse Power Dissipation 10 8 6 0.5 4 SIN 0.8 2 0 0 20 40 60 80 100 120 VR [V] Reverse Voltage Tj =150C 0 VR tp D=tp/T T SF20JC10 40 35 Derating Curve Average Rectified Forward Current DC 30 25 0.5 20 SIN 0.3 15 0.2 10 0.1 0.05 5 0 D=0.8 IO [A] 0 20 40 60 80 100 120 140 160 Tc [C] Case Temperature VR =50V 0 0 VR tp D=tp/T T IO SF20JC10 300 Peak Surge Forward Capability IFSM 10ms 10ms 250 1 cycle IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 200 Peak Surge Forward Current 150 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycle] SF20JC10 5000 Junction Capacitance f=1MHz Tc=25C TYP per diode 2000 [pF] Cj Junction Capacitance 1000 500 200 100 50 20 10 0.1 0.2 0.5 1 2 5 10 20 50 100 Reverse Voltage VR [V] |
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